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| BC327A PNP Epitaxial Silicon Transistor BC327A PNP Epitaxial Silicon Transistor Switching and Amplifier Applications * Suitable for AF-Driver stages and low power output stages 1 TO-92 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * T Symbol VCES VCEO VEBO IC PC TJ TSTG Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature a = 25C unless otherwise noted Parameter Value -60 -60 -5 -800 625 150 -55 ~ 150 Units V V V mA mW C C Electrical Characteristics Symbol BVCEO BVCES BVEBO ICES hFE1 hFE2 VCE (sat) VBE (on) fT Cob Ta = 25C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -10mA, IB=0 IC= -100A, VBE=0 IE= -100A, IC=0 VCE= -45V, VBE=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -500mA IC= -500mA, IB= -50mA VCE= -1V, IC= -300mA VCE= -5V, IC= -10mA, f=20MHz VCB= -10V, IE=0, f=1MHz Min. -60 -60 -5 Typ. Max. Units V V V -100 100 40 400 -0.7 -1.2 100 12 nA V V MHz pF (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BC327A Rev. A BC327A PNP Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. Static Characterstic -500 Figure 2. Static Characteristic -20 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -400 -300 mA - 5.0 A IB = - 4.5m = IB 0m A - 4. A IB = - 3.5m A = 3.0m IB A IB = - 2.5m IB = 0mA - 2. IB = IB= -16 - 80 A IB= A - 70 IB= - 60 A A - 50 IB= - 40 P T =6 00 mW IB= -12 A 30A A 1.5m IB = PT = 60 0mW -200 -8 IB = - IB = - 1.0mA IB = - 0.5mA 0A IB = - 2 -4 -100 IB = - 10A IB = 0 -0 -1 -2 -3 -4 -5 IB = 0 -10 -20 -30 -40 -50 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 1000 PULSE VCE = - 2.0V IC = 10 IB PULSE VCE(sat) hFE, DC CURRENT GAIN 100 -1 - 1.0V 10 -0.1 VBE(sat) 1 -0.1 -1 -10 -100 -1000 -0.01 -0.1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 5. Base-Emitter On Voltage -1000 Figure 6. Gain Bandwidth Product 1000 IC[mA], COLLECTOR CURRENT VCE = -1V PULSE -100 fT[MHz], GAIN-BANDWIDTH PRODUCT VCE = -5.0V -10 100 -1 -0.1 -0.4 10 -0.5 -0.6 -0.7 -0.8 -0.9 -1 -10 -100 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT 2 BC327A Rev. A www.fairchildsemi.com BC327A PNP Epitaxial Silicon Transistor Mechanical Dimensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters 3 BC327A Rev. A www.fairchildsemi.com BC327A PNP Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 4 BC327A Rev. A www.fairchildsemi.com |
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